Memory device with unipolar selector

ABSTRACT

Various embodiments of the present application are directed towards a memory cell, an integrated chip comprising a memory cell, and a method of operating a memory device. In some embodiments, the memory cell comprises a data-storage element having a variable resistance and a unipolar selector electrically coupled in series with the data-storage element. The memory cell is configured to be written by a writing voltage with a single polarity applying across the data-storage element and the unipolar selector.

BACKGROUND

Many modern-day electronic devices include electronic memory. Electronicmemory may be volatile memory or non-volatile memory (NVM). Non-volatilememory is able to store data in the absence of power, whereas volatilememory is not. Non-volatile memory such as magnetoresistiverandom-access memory (MRAM) and resistive random access memory (RRAM)are promising candidates for next generation non-volatile memorytechnology due to relative simple structures and their compatibilitywith complementary metal-oxide-semiconductor (CMOS) logic fabricationprocesses.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a schematic diagram of some embodiments of a memorycell comprising a unipolar selector.

FIG. 2 illustrates a schematic diagram of some alternative embodimentsof a memory cell comprising a unipolar selector.

FIG. 3 illustrates a schematic diagram of some more detailed embodimentsof the memory cell of FIG. 1 in which the unipolar selector comprises amultilayer stack.

FIG. 4 illustrates a schematic diagram of some embodiments of the memorycell of FIG. 1 comprising a unipolar selector and a magnetic fieldgenerator coupled to the memory cell.

FIG. 5 illustrates a graph of some embodiments of current-voltage (I-V)curves for the unipolar selector of FIG. 1.

FIGS. 6A-6D illustrate cross-sectional views of varies embodiments of anintegrated chip comprising the memory cell of FIG. 1, FIG. 2, FIG. 3, orFIG. 4.

FIG. 7 illustrates a schematic view of some embodiments of a memoryarray comprising a plurality of memory cells of FIG. 1, FIG. 2, or FIG.3.

FIGS. 8A-8B illustrate schematic views of some embodiments of the memoryarray of FIG. 7 at various operational states.

FIGS. 9A-9B illustrate schematic views of varies embodiments of thememory array comprising a plurality of memory cells of FIG. 4.

FIGS. 10 and 11 illustrate schematic views of various embodiments of athree dimensional (3D) memory array comprising comprising stacked memoryarrays of memory cells of FIG. 1, FIG. 2, FIG. 3 or FIG. 4.

FIGS. 12 and 13 illustrate cross-sectional views of various embodimentsof an integrated chip comprising the three dimensional (3D) memory arrayin FIGS. 10 and 11.

FIGS. 14-17 illustrate a series of cross-sectional views of someembodiments of a method for forming an integrated chip comprising amemory array, where memory cells of the memory array comprise unipolarselectors.

FIG. 18 illustrates a block diagram of some embodiments of the method ofFIGS. 14-17.

FIG. 19 illustrates a block diagram of some embodiments of a method ofoperating a memory device that can include a memory cell of FIGS. 1-4, amemory array of FIGS. 7-11, or an integrated chip to FIG. 6A-6D, 12 or13.

DETAILED DESCRIPTION

The present disclosure provides many different embodiments, or examples,for implementing different features of this disclosure. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

A cross-point memory architecture with one-selector one-resistor (1S1R)memory cells is increasingly receiving attention for use with nextgeneration electronic memory due to its high density. A cross-pointmemory array may, for example, comprise multiple one-selectorone-resistor (1S1R) memory cells respectively arranged at cross pointsof bit lines and source lines. The selector is a bipolar deviceconfigured to pass bidirectional current when biased above respectivethreshold voltages. By appropriately biasing a bit line and a sourceline (e.g. BL0 and SL0), a 1S1R memory cell at a cross point of the bitline and the source line can be selected and written to opposite states.When a 1S1R memory cell is selected, other bit lines and source linesmay be biased at a middle point voltage to turn off unselected memorycells. However, a first group of unselected memory cells shares the samebit line (BL0) with the selected 1S1R memory cell and thus is biased ata difference voltage of the bit line voltage and the middle pointvoltage. Similarly, a second group of unselected memory cells share thesame source line (SL0) with the selected 1S1R memory cell and thus isbiased at a difference voltage of the source line voltage and the middlepoint voltage. The collective leakage current flowing through the firstgroup of unselected memory cells and the second group of unselectedmemory cells introduces disturbance and reduces the current window formemory operation for reading and writing operations. The disturbance mayeven result in a reading failure during the reading operation or a falsewriting during the writing operation.

In view of above, various embodiments of the present application aredirected towards a memory cell using a unipolar selector, as well as aunipolar operation method of such memory cell. The unipolar selectormay, for example, be a diode or some other suitable unipolar device thatis turned on when a forward bias greater than its threshold voltage isapplied. The unipolar selector is electrically coupled in series with adata-storage element and controls current flowing through thedata-storage element or voltage applied across the data-storage element.In some embodiments, the memory cell is read from and written to at asingle polarity and cannot be rewritten. In some alternativeembodiments, a reset operation may be performed by other means such asusing an external magnetic field generated by an off-board or on-boardmagnetic field generator. By using the unipolar selector rather than thebipolar selector, unselected memory cells can be biased at the oppositepolarity and thus minimize leakage current and reduce reading andwriting disturbance.

With reference to FIG. 1, a schematic diagram 100 of some embodiments ofa memory cell 102 comprising a unipolar selector 104 is provided. Aunipolar selector switches at a single polarity whereas a bipolarselector switches at two polarities. At a first polarity, the unipolarselector conducts and/or is in a low resistance state called “on” stateif the voltage across the unipolar selector exceeds a threshold voltage.Otherwise, at the first polarity, the unipolar selector isnon-conducting or is in a high resistance state called “off” state. Atthe second polarity, the unipolar selector is in the “off” state. Theunipolar selector 104 is configured to selectively allow current to flowin a first direction from a bit line BL to a source line SL, whileblocking the flow of current in a second direction from the source lineSL to the bit line BL. In some embodiments, the unipolar selector 104has only two terminals. In some alternative embodiments, the unipolarselector 104 has more than two terminals. The unipolar selector 104 may,for example, be PIN diodes, polysilicon diodes, punch-through diodes,varistor-type selectors, ovonic threshold switches (OTSs),doped-chalcogenide-based selectors, Mott effect based selectors,mixed-ionic-electronic-conductive (MIEC)-based selectors,field-assisted-superliner-threshold (FAST) selectors, filament-basedselectors, doped-hafnium-oxide-based selectors, or some other suitablediodes and/or selectors.

The unipolar selector 104 is electrically coupled in series with adata-storage element 106, from the bit line BL to the source line SL. Insome embodiments, locations of the bit line BL and the source line SLcan be reversed. An example of the operation is as follows: when thevoltage across the unipolar selector 104 is positive from the bit lineBL to the data-storage element 106, the unipolar selector 104 conductsand is in a low resistance state if the voltage across the unipolarselector 104, from the bit line BL to the data-storage element 106,exceeds a threshold voltage Vt. Otherwise, the unipolar selector 104 isnon-conducting and/or is in a high resistance state. The data-storageelement 106 stores a bit of data. As an example, during the writingoperation, a writing voltage is applied such that the unipolar selector104 is biased above the threshold voltage at the first polarity and thedata-storage element 106 is set to a first data state. During thereading operation, a reading voltage is applied such that the unipolarselector 104 is biased above the threshold voltage at the first polaritywhile the data-storage element 106 is not altered. The reading voltagemay be smaller than the writing voltage.

In some embodiments, a resistance of the data-storage element variesdepending upon a data state of the data-storage element 106. Forexample, the data-storage element 106 may have a low resistance at afirst data state and may have a high resistance at a second data state.In other embodiments, capacitance or some other suitable parameter ofthe data-storage element 106 varies depending upon a data state of thedata-storage element 106. In some embodiments, the data-storage element106 is a magnetic tunnel junction (MTJ) or a spin-valve and is writtenby a spin-transfer torque (STT) method. In such cases, the memory cell102 is referred as a STT magnetic memory cell, and the memory devicemade of an array of such memory cells is referred as a STT-MRAM device.The STT method is described in more details below. In some alternativeembodiments, the data-storage element 106 is a metal-insulator-metal(MIM) stack, and the memory cell 102 may be a resistance memory cell.Other structures for the data-storage element 106 and/or othermemory-cell types for the memory cell 102 are also amenable.

As an example, the data-storage element 106 comprises a referenceferromagnetic element 108, a free ferromagnetic element 110, and abarrier element 112 and stores data using the STT method. The barrierelement 112 is non-magnetic and is sandwiched between the referenceferromagnetic element 108 and free ferromagnetic element 110. Thereference ferromagnetic element 108 has a fixed magnetization, whereasthe free ferromagnetic element 110 has variable a magnetization. Thebarrier element 112 can be a tunneling barrier layer. In someembodiments, a spin-polarized current is created by passing a currentthough the reference ferromagnetic element 108. This current is thendirected into free ferromagnetic elements 110, transfers the angularmomentum, and changes the spin of the electrons in the freeferromagnetic elements 110. Magnetic moments of the referenceferromagnetic element 108 and the free ferromagnetic element 110 can bein-plane or perpendicular to a silicon substrate surface. Devices withperpendicular magnetic moments are more scalable compared to those within-plane moments and re also more cost competitive. Depending uponwhether magnetizations of the reference ferromagnetic element 108 andfree ferromagnetic element 110 are parallel or antiparallel, thedata-storage element 106 has a low resistance or a high resistance. Forexample, the data-storage element 106 may have the low resistance whenthe magnetizations of the reference ferromagnetic element 108 and freeferromagnetic element 110 are parallel and may have the high resistancewhen the magnetizations are antiparallel. The low and high resistancesmay, in turn, be used to represent different data states of thedata-storage element 106.

In some embodiments, the barrier element 112 is a tunnel barrierselectively allowing quantum mechanical tunneling of electrons throughthe barrier element 112. For example, quantum mechanical tunneling maybe allowed when the reference ferromagnetic element 108 and freeferromagnetic element 110 have parallel magnetizations, and may beblocked when the reference ferromagnetic element 108 and freeferromagnetic element 110 have antiparallel magnetizations. The barrierelement 112 may, for example, be or comprise an amorphous barrier, acrystalline barrier, or some other suitable barrier. The amorphousbarrier may be or comprise, for example, aluminum oxide (e.g., AlO_(x)),titanium oxide (e.g., TiO_(x)), or some other suitable amorphousbarrier. The crystalline barrier may be or comprise manganese oxide(e.g., MgO), spinel (e.g., MgAl₂O₄), or some other suitable crystallinebarrier.

In some embodiments, the reference ferromagnetic element 108 is orcomprises cobalt iron (e.g., CoFe), cobalt iron boron (e.g., CoFeB), orsome other suitable ferromagnetic material(s), or any combination of theforegoing. In some embodiments, the reference ferromagnetic element 108adjoins an antiferromagnetic element (not shown) and/or is part of orotherwise adjoins a synthetic antiferromagnetic (SAF) element (notshown). In some embodiments, the free ferromagnetic element 110 is orcomprises cobalt iron (e.g., CoFe), cobalt iron boron (e.g., CoFeB), orsome other suitable ferromagnetic material(s), or any combination of theforegoing.

With reference to FIG. 2, a schematic diagram 200 of some alternativeembodiments of the memory cell 102 of FIG. 1 is provided in which thereference ferromagnetic element 108 overlies the free ferromagneticelement 110. Since the reference ferromagnetic element 108 overlies thefree ferromagnetic element 110, the polarities at which the writingvoltage is applied across the data-storage element 106 are reversedcompared to FIG. 1. The writing voltage is applied across thedata-storage element 106 at the second polarity to set the data-storageelement 106 to the antiparallel state.

With reference to FIG. 3, a schematic diagram 300 of some more detailedembodiments of the memory cell 102 of FIG. 1 is provided in which theunipolar selector 104 is a multilayer stack. The unipolar selector 104comprises a cathode 302, an insulator 304, and an anode 306. Theinsulator 304 is sandwiched between the cathode 302 and the anode 306.In some embodiments, the cathode 302 is directly connected to thereference ferromagnetic element 108 of the data-storage element 106,meaning the cathode 302 is electrically connected to the referenceferromagnetic element 108 by one or more conductive wires and/or viaswithout other electronic devices disposed therebetween. In somealternative embodiments, the unipolar selector 104 may be reverselyplaced that the anode 306 is directly connected to the referenceferromagnetic element 108. The multilayer stacks may, for example, be orcomprise a PIN diode or some other multilayer devices. In someembodiments in which the multilayer stack is a PIN diode, the cathode302 is or comprises N-type semiconductor material, the anode 306 is orcomprises P-type semiconductor material, and the insulator 304 is orcomprises intrinsic or lightly doped semiconductor material. Theinsulator 304 may, for example, be lightly doped relative to the cathode302 and/or the anode 306. The semiconductor material of the multilayerstacks may, for example, be or comprises polysilicon, monocrystallinesilicon, germanium, indium gallium arsenide, or some other suitablesemiconductor material. In some embodiments in which the multilayerstack is a MIM device, the cathode 302 and the anode 306 are or comprisemetal or some other suitable conductive material and/or the insulator304 is or comprises doped hafnium oxide, some other suitable metaloxide, or some other suitable insulator material.

In some embodiments, a thickness T₁ of the insulator 304 is varied toadjust the threshold voltage of the unipolar selector 104. For example,increasing a thickness of an insulator may increase a threshold voltageof the corresponding unipolar selector whereas decreasing the thicknessmay decrease the threshold voltage. In some embodiments, a dopingconcentration of the insulator 304 is varied to adjust the thresholdvoltage of the unipolar selector 104. For example, increasing a dopingconcentration of an insulator may decrease a threshold voltage of thecorresponding selector whereas decreasing the doping concentration mayincrease the threshold voltage. In some embodiments, a width Wi of theunipolar selector 104 is varied to adjust an “on” resistance of theunipolar selector 104. For example, increasing a width of a selector maydecrease an “on” resistance of the selector whereas decreasing the widthmay increase the “on” resistance.

With reference to FIG. 4, a schematic diagram 400 of some embodiments ofthe memory cell of FIG. 1 is provided in which a magnetic fieldgenerator 114 is coupled to the data-storage element 106. The magneticfield generator 114 may be a current carrying wire configured togenerate a magnetic field that can change polarity of the freeferromagnetic element 110 and thus change data state of the data-storageelement 106. In some embodiments, the magnetic field generator 114 iscontrolled by a controller and configured to generate an externalmagnetic field that resets the data-storage element 106 to the statusopposite to the writing operation. An exemplary memory array applicationof the memory cell shown by FIG. 4 is given later with reference to FIG.9A or FIG. 9B.

With reference to FIG. 5, a graph 500 of some embodiments ofcurrent-voltage (I-V) curves for the unipolar selector 104 of FIG. 1 isprovided. A horizontal axis of the graph 500 corresponds to voltage, anda vertical axis of the graph 500 corresponds to current. Further, aright side of the graph 500 corresponds to the first polarity of theunipolar selector 104, and a left side of the graph 500 corresponds tothe second polarity of the unipolar selector 104. The graph 500 includesa first I-V curve 502 where the bias V applied on the unipolar selector104 is smaller than the threshold voltage V_(t) and a second I-V curve504 where the bias V applied on the unipolar selector 104 is greaterthan the threshold voltage Vt. As shown by the first I-V curve 502,current is minimum when the voltage V applied on the unipolar selector104 is smaller than the threshold voltage V_(t) of the unipolar selector104. As shown by the second I-V curve 504, current increases when thevoltage V applied on the unipolar selector 104 exceeds the thresholdvoltage V_(t) of the unipolar selector 104.

With reference to FIG. 6A, a cross-sectional view 600 a of someembodiments of an integrated chip comprising the memory cell 102 of FIG.1 is provided. The memory cell 102 overlies a substrate 602 and islocated within an interconnect structure 604 that covers the substrate602. The interconnect structure 604 may be a back-end-of-line (BEOL)structure that comprises a plurality of wires 608 and a plurality ofvias 610 surrounded by an interconnect dielectric layer 606. Theinterconnect dielectric layer 606 may, for example, be or comprisesilicon oxide, a low κ dielectric, some other suitable dielectric(s), orany combination of the foregoing. As used herein, a low κ dielectric maybe, for example, a dielectric with a dielectric constant κ less thanabout 3.9. The wires 608 and the vias 610 are alternatingly stacked inthe interconnect dielectric layer 606 to define conductive pathsinterconnecting components of the memory cell 102 and/or connecting thememory cell 102 to other devices (not shown) in the integrated chip. Thewires 608 and the vias 610 may, for example, be or comprise metal, someother suitable conductive material(s), or any combination of theforegoing. For example, an intermediate via 610′ may define conductivepaths electrically coupling the unipolar selector 104 in series with thedata-storage element 106. In some embodiments, due to the simplifiedstructure of the disclosed selector, the memory cell 102 (including theunipolar selector 104 and the data-storage elements 106) may be insertedbetween two direct neighboring layers of metal wires. Therefore, theposition of the memory cell 102 is more easily co-optimized with placeand route requirement. The intermediate via 610′ may have a smallerheight than the vias 610.

With reference to FIG. 6B, a cross-sectional view 600 b of somealternative embodiments of an integrated chip comprising the memory cell102 of FIG. 1 is provided. Besides the similar features discussed aboveassociated with FIG. 6A, in some alternative embodiments, the memorycell 102 (including the unipolar selector 104 and the data-storageelements 106) is inserted between two non-neighboring layers of metalwires 608, and one or more additional wire layers may existtherebetween. The unipolar selector and the data-storage element 106 maybe connected by multiple sub-vias 610 b connected by one or moreisolated metal islands 608 b. The isolated metal islands 608 b has awidth equal to that of the other wires 608 of the same interconnectlayer and does not connect to other memory cells. The sub-vias 610 b mayhave a smaller greater height than the vias 610. Here, two componentsare considered as “directly connected” if only conductive lines such aswires 608, the isolated metal islands 608 b, and/or the vias 610 areused to connect the two components and no other electronic componentsare inserted therebetween. For example, the unipolar selector 104 andthe data-storage element 106 are directly connected in this case.

With reference to FIG. 6C, a cross-sectional view 600 c of somealternative embodiments of an integrated chip comprising the memory cell102 of FIG. 1 is provided. Besides the similar features discussed aboveassociated with FIGS. 6A-6B, the unipolar selector 104 and thedata-storage element 106 may also be directly stacked one above another.Thus, a bottom surface of the reference ferromagnetic element 108 of thedata-storage element 106 and a top surface of the cathode 302 of theunipolar selector 104 may directly contact one another. Though not shownin figures, in some alternative embodiments, the free ferromagneticelement 110 of the data-storage element 106 may have a top/bottomsurface directly contacting a top/bottom surface of the anode 306 or thecathode 302, or the anode 306 may have a top/bottom surface directlycontacting a top/bottom surface of the free ferromagnetic element 110 orthe reference ferromagnetic element 108. The cathode 302 and the anode306 may have the same lateral dimensions. The free ferromagnetic element110 and the reference ferromagnetic element 108 may have the samelateral dimensions. In some embodiments, the unipolar selector 104 has alateral area between approximately 1 to 5 times a lateral area of thedata-storage element 106, which is a smaller size than an accesstransistor and at a higher quality than other types of bipolarselectors. Accordingly, the resulting memory cell is able to haverelatively small size and good performance (e.g., high endurance andaccess speed). Lateral dimensions include length and width dimensions inparallel with surface of substrate. The memory cell 102 may be insertedbetween two neighboring or non-neighboring layers of metal wires 608,and one or more additional wire layers may or may not existtherebetween.

With reference to FIG. 6D, a cross-sectional view 600 d of somealternative embodiments of an integrated chip comprising the memory cell102 of FIG. 1 is provided. Besides the similar features discussed aboveassociated with FIGS. 6A-6C, the isolated metal islands 608 b may beused as the cathode 302 of unipolar selector 104. The unipolar selector104 can also be reversed, and the isolated metal islands 608 b can beused as the anode 306. In this case, the cathode 302 and the anode 306may have different lateral dimensions. The isolated metal islands 608 bhas a width equal to that of the other wires 608 of the sameinterconnect layer. The insulator 304 therebetween may have the samewidth with one of the cathode 302 or the anode 306 not functioned by theisolated metal islands 608 b and greater than that of the isolated metalislands 608 b. By using the isolated metal islands 608 b as oneelectrode of the unipolar selector 104, the manufacturing process isfurther simplified, and the device structure is more compact.

In some embodiments, the integrated chip is a stand alone memory. Insome alternative embodiments, the memory cell 102 is embedded in a logiccircuit disposed on the substrate 602. For example, a semiconductordevice 612 is disposed on the substrate 602 integrating with the memorycell 102. In some embodiments, the semiconductor device 612 iselectrically coupled to the memory cell 102 by the wires 608 and thevias 610. The semiconductor device 612 may, for example, be ametal-oxide-semiconductor (MOS) device, an insulated-gate field-effecttransistor (IGFET), or some other suitable semiconductor device. In someembodiments, the semiconductor device 612 comprises a pair ofsource/drain regions 614, a gate dielectric layer 616, and a gateelectrode 618. The source/drain regions 614 are in the substrate 602,along a top surface of the substrate 602. The gate dielectric layer 616and the gate electrode 618 are stacked over the substrate 602,vertically between the substrate 602 and the interconnect structure 604and laterally between the source/drain regions 614.

With reference to FIG. 7, a schematic view 700 of some embodiments of amemory array 702 comprising a plurality of memory cells 102 in aplurality of rows and a plurality of columns is provided. The memorycells 102 respectively comprises the unipolar selector 104 electricallycoupled in series with the data-storage elements 106. The memory cells102 may, for example, each be as illustrated and described with regardto FIGS. 1-3. As an example, bit lines (e.g. BL_(m), BL_(m+1), BL_(m+2))extend laterally along corresponding rows of the memory array andelectrically couple with memory cells in the corresponding rows, whereassource lines (e.g. SL_(n), SL_(n+1), and SL_(n+2)) extend laterallyalong corresponding columns of the memory array and electrically couplewith memory cells in the corresponding columns. The subscripts identifycorresponding rows or columns and m or n is an integer variablerepresenting a row or a column in the memory array 702. Example numbersof m or n are 256, 512, 1024, etc. By appropriately biasing a bit lineand a source line, the memory cell at the cross point of the bit lineand the source line may be selected for reading or writing.

With reference to FIG. 8A-8B, schematic diagram 800A-800B of someembodiments of the memory array 702 of FIG. 7 are provided at variousoperational states to illustrate operation of the memory array 702. Thememory array 702 may be used as a read only memory device for which allmemory cells are pre-set to a first data state (e.g., a logic “0”) in atest stage or a specific environment. Once selected, a memory cell canonly be written to a second data state (e.g., a logic “1”) by a currentflowing through the memory cell or a voltage applying across the memorycell with single polarity. The memory array 702 may be pre-set by anexternal magnetic field or an on-board magnetic field generator. FIG. 8Aillustrates the memory array 702 while writing a selected memory cell102 s to a second data state (e.g., a logic “1”). FIG. 8B illustratesthe memory array 702 while reading a state of the selected memory cell102 s.

As illustrated by FIG. 8A, the selected memory cell 102 s is at thecross point of the source line SL_(n+2) and the bit line BL_(m+2), forexample. The bit line BL_(m+2) is biased with a writing voltage Vw whilethe source line SL_(n+2) is grounded. The writing voltage Vw is positivefrom the bit line BL_(m+2) to the source line SL_(n+2), and provides abias to the unipolar selector 104 exceeding the threshold voltage of theunipolar selector 104, such that the selected memory cell 102 s is at afirst polarity and the unipolar selector 104 of the selected memory cell102 s is “on”. Current Iw flows through the selected memory cell 102 sand sets the data-storage element 106 of the selected memory cell 102 sto the second data state (e.g., a logic “1”). For example, thedata-storage element 106 can be a MTJ structure and can be written byspin-transfer torque induced by the current Iw.

In some embodiments, other unselected memory cells 102 u are reverselybiased by an inhibiting voltage at a second polarity opposite to thefirst polarity to keep the unselected memory cells “off” when writingthe selected memory cell 102 s. The inhibiting voltage may have anabsolute value that is equal to that of the writing voltage Vw or someother fractions of the writing voltage Vw. Alternatively, the inhibitingvoltage may have an absolute value that is greater than the writingvoltage Vw. For example, some unselected memory cells 102 u share thesource line SL_(n+2) or the bit line BL_(m+2) with the selected memorycell 102 s. However, corresponding bit lines BL_(m), BL_(m+1) and sourcelines SL_(n), SL_(n+1) connecting these unselected memory cells 102 uare oppositely biased. For example, the source line SL_(n+2) and the bitline BL_(m), are both grounded, and the source line SL_(n) and the bitline BL_(m+2) are both biased at Vw or some other fraction of thewriting voltage Vw. Accordingly, current flowing through the unselectedmemory cells 102 u is reduced or prevented, and writing disturbance tothe unselected memory cells 102 u is reduced. In some embodiments,source lines SL_(n), SL_(n+1) are biased with the writing voltage Vw orsome other fraction of the writing voltage Vw while bit lines BL_(m),BL_(m+1) can be grounded. Thus, leakage current and its resultingwriting disturbance can be reduced.

As illustrated by FIG. 8B, the bit line BL_(m+2) is biased with a readvoltage V_(r) while source line SL_(n+2) is grounded. The read voltageV_(r) is smaller than the writing voltage Vw and is small enough thatthe resulting read current I_(r) does not change a state of the selectedmemory cell 102 s. For example, the writing voltage Vw can be in a rangeof about 0.3V to about 1V, and the reading voltage V_(r) can be smallerthan 0.3V such that the state of the selected memory cell 102 s is notaltered. The reading voltage V_(r) also needs to be able to turn on theunipolar selector 104 of the selected memory cell 102 s such thatcurrent can flow through the data-storage element 106. For example, thereading voltage V_(r) may need to be equal or greater than 0.1V. Theread current I_(r) can be used to decide the resistances of thedata-storage elements 106 and the corresponding data states of theselected memory cell 102 s. Similar to the writing operation, unselectedmemory cells 102 u are biased at a second polarity opposite to the firstpolarity when applying the reading voltage V_(r) across the selectedmemory cell 102 s. The unselected memory cells 102 u may be reverselybiased by an inhibiting voltage having an absolute value that is equalto that of the reading voltage. Thus, leakage current and its resultingreading disturbance can be reduced.

With reference to FIG. 9A and FIG. 9B, schematic views 900 a, 900 b ofthe memory array 702 comprising a magnetic field generator 114 coupledto the plurality of memory cells 102 is provided according to somefurther embodiments. In addition to the description above related toFIG. 7 and FIGS. 8A-B, the magnetic field generator 114 may be arrangednext to the plurality of memory cells 102 to provide an externalmagnetic field to set or reset status of the plurality of memory cells102. As shown in FIG. 9A, the magnetic field generator 114 may be acurrent carrying wire arranged alongside the plurality of memory cells102. As shown in FIG. 9B, the magnetic field generator 114 may comprisea plurality of current carrying wires that can be be separatelycontrolled such that the memory cells 102 can be reset by groups, oreven individually.

With reference to FIG. 10, a schematic view 1000 of some embodiments ofa three dimensional (3D) memory array comprising a first memory array702 a and a second memory array 702 b is provided. The first memoryarray 702 a and the second memory array 702 b are stacked, such that thesecond memory array 702 b overlies and is spaced from the first memoryarray 702 a. Stacking the first memory array 702 a and the second memoryarray 702 b may, for example, enhance memory density. In someembodiments, as illustrated, the first memory array 702 a and the secondmemory array 702 b are each as the memory array 702 in FIG. 7 isillustrated and described. As an example, anodes of the unipolarselectors 104 of the first memory array 702 a are connected to the firstplurality of bit lines BL_(m), BL_(m+1), and BL_(m+2). Cathodes of theunipolar selectors 104 of the first memory array 702 a are connected tofirst terminals of the data-storage element 106 of the first memoryarray 702 a. Second terminals of the data-storage elements 106 of thefirst memory array 702 a are respectively connected to a first pluralityof source lines SL_(n), SL_(n+1), and SL_(n+2). Anodes of the unipolarselectors 104 of the second memory array 702 b are connected to thesecond plurality of bit lines BL_(m), BL_(m+1), and BL_(m+2). Cathodesof the unipolar selectors 104 of the second memory array 702 b areconnected to first terminals of the data-storage elements 106 of thesecond memory array 702 b. Second terminals of the data-storage elements106 of the second memory array 702 b are respectively connected to asecond plurality of source lines SL_(n), SL_(n+1), and SL_(n+2).Alternatively, it is appreciated by person in the art that the unipolarselectors 104 and the data-storage elements 106 of the first memoryarray 702 a and the second memory array 702 b can respectively arrangedin mirror.

With reference to FIG. 11, a schematic view 1100 of some alternativeembodiments the 3D memory array of FIG. 10 is provided in which thefirst memory array 702 a and the second memory array 702 b share sourcelines. As above, the source lines are respectively labeled SL_(n),SL_(n+1), and SL_(n+2), where the subscripts identify correspondingcolumns and n is an integer variable representing a column in the 3Dmemory array. Example numbers of m or n are 256, 512, 1024, etc. As anexample, anodes of the unipolar selectors 104 of the first memory array702 a are connected to the first plurality of bit lines BL_(m),BL_(m+1), and BL_(m+2). Cathodes of the unipolar selectors 104 of thefirst memory array 702 a are connected to first terminals of thedata-storage element 106 of the first memory array 702 a. Anodes of theunipolar selectors 104 of the second memory array 702 b are connected tothe second plurality of bit lines BL_(m), BL_(m+1), and BL_(m+2).Cathodes of the unipolar selectors 104 of the second memory array 702 bare connected to first terminals of the data-storage elements 106 of thesecond memory array 702 b. Second terminals of the data-storage elements106 of the first memory array 702 a and the second memory array 702 bare respectively connected to a plurality of shared source lines SL_(n),SL_(n+1), and SL_(n+2). Alternatively, it is appreciated by person inthe art that the unipolar selectors 104 and the data-storage elements106 of the first memory array 702 a and the second memory array 702 bcan respectively arranged in mirror. Also, the first memory array 702 aand the second memory array 702 b can share a plurality of bit lines andrespectively connected to individual source lines.

With reference to FIG. 12, a cross-sectional view 1200 of someembodiments of an integrated chip comprising a pair of stacked memorycells 102 from the 3D memory array of FIG. 10 is provided. The stackedmemory cells 102 are at the same row and the same column in the 3Dmemory array. Further, a lower one of the stacked memory cells 102 is inthe first memory array 702 a of FIG. 10, whereas an upper one of thestacked memory cells 102 is in the second memory array 702 b of FIG. 10.The stacked memory cells 102 overlie a substrate 602 and are surroundedby an interconnect dielectric layer 606 of an interconnect structure604. Further, wires 608 and vias 610 in the interconnect dielectriclayer 606 electrically interconnect components of the stacked memorycells 102.

With reference to FIG. 13, a cross-sectional view 1300 of somealternative embodiments of the integrated chip of FIG. 12 is provided inwhich the stacked memory cells 102 are instead from the 3D memory arrayof FIG. 11. Accordingly, the stacked memory cells 102 share a sourceline SL defined by one of the wires 608.

With reference to FIGS. 14-17, a series of cross-sectional views1400-1700 of some embodiments of a method for forming an integrated chipcomprising a memory array is provided in which memory cells of thememory array comprise unipolar selector.

As illustrated by the cross-sectional view 1400 of FIG. 14, aninterconnect structure 604 is partially formed over a substrate 602. Thesubstrate 602 may, for example, be a bulk silicon substrate, asilicon-on-insulator (SOI) substrate, or some other suitable substrate.The interconnect structure 604 comprises a first interconnect dielectriclayer 606 a, a first wire 608 a defining a bit line BL, and a first setof vias 610 a. The first interconnect dielectric layer 606 aaccommodates the first wire 608 a and the first vias 610 a and may, forexample, be or comprise silicon oxide, a low κ dielectric, some othersuitable dielectric(s), or any combination of the foregoing. A low κdielectric may be, for example, a dielectric with a dielectric constantκ less than about 3.9, 3, 2, or 1. The first wire 608 a and the firstvias 610 a are stacked in the first interconnect dielectric layer 606 a,such that the first vias 610 a overlie the first wire 608 a.

In some embodiments, semiconductor devices (not shown) are on thesubstrate 602, between the substrate 602 and the interconnect structure604. In some embodiments, additional wires (not shown) and/or additionalvias (not shown) are alternatingly stacked in the first interconnectdielectric layer 606 a, between the substrate 602 and/or the first wire608 a. The additional wires and/or the additional vias may, for example,define conductive paths leading from semiconductor devices (not shown)on the substrate 602. In some embodiments, a process for partiallyforming the interconnect structure 604 comprises: 1) depositing a lowerinterconnect portion of the first interconnect dielectric layer 606 a onthe substrate 602; 2) forming the first wire 608 a inset into the lowerinterconnect portion; 3) forming an upper interconnect portion of thefirst interconnect dielectric layer 606 a on the first wire 608 a andthe lower interconnect portion; and 4) forming the first vias 610 ainset into the upper interconnect portion. Other processes for partiallyforming the interconnect structure 604 are, however, amenable.

As illustrated by the cross-sectional view 1500 of FIG. 15, a unipolarselector 104 is formed overlying the bit line BL and electricallycoupled to the bit line BL by one of the first vias 610 a. The unipolarselector 104 comprises a cathode 302, an insulator 304, and an anode306. The insulator 304 is between the cathode 302 and the anode 306, andthe cathode 302 overlies the anode 306. The cathode 302, the insulator304, and the anode 306 may, for example, define a PIN diode, a MIMdevice, or some other multilayer device. In some embodiments in whichthe cathode 302, the insulator 304, and the anode 306 define a PINdiode, the cathode 302 is or comprise N-type semiconductor material, theanode 306 is or comprises P-type semiconductor material, and theinsulator 304 is or comprise intrinsic or lightly doped semiconductormaterial. The insulator 304 may, for example, be lightly doped relativeto the cathode 302 and/or the anode 306. The semiconductor material forthe cathode 302, the insulator 304, and the anode 306 may, for example,be or comprises polysilicon, monocrystalline silicon, or some othersuitable semiconductor material. In some alternative embodiments inwhich the cathode 302, the insulator 304, and the anode 306 define a MIMdevice, the cathode 302 and the anode 306 are or comprise metal or someother suitable conductive material and/or the insulator 304 is orcomprises doped hafnium oxide, some other suitable metal oxide, or someother suitable insulator material.

In some embodiments, a process for forming the unipolar selector 104comprises: 1) depositing an anode layer on the interconnect structure604; 2) depositing an insulator layer on the anode layer; 3) depositinga cathode layer on the insulator layer; and 4) patterning the multilayerfilm into the unipolar selector 104. Other processes are, however,amenable. The depositing may, for example, be performed by chemicalvapor deposition (CVD), physical vapor deposition (PVD), electrolessplating, electroplating, some other suitable deposition process(es), orany combination of the foregoing. The patterning may, for example, beperformed by a photolithography/etching process and/or some othersuitable patterning process(es).

As illustrated by the cross-sectional view 1600 of FIG. 16, theinterconnect structure 604 is extended around the unipolar selector 104.The extended interconnect structure 604 further comprises a secondinterconnect dielectric layer 606 b, an isolated metal islands 608 b,and a set of sub-vias 610 b. In some embodiments, the isolated metalislands 608 b is formed together with other metal wires of the sameinterconnect layer and does not connect to other memory cells. Thesecond interconnect dielectric layer 606 b accommodates the isolatedmetal islands 608 b and the sub-vias 610 b, and may, for example, be asthe first interconnect dielectric layer 606 a is described. The isolatedmetal islands 608 b and the sub-vias 610 b are stacked in the secondinterconnect dielectric layer 606 b, such that the isolated metalislands 608 b is electrically coupled to the unipolar selector 104 byone of the sub-vias 610 b under the isolated metal islands 608 b and oneof the sub-vias 610 b overlies the isolated metal islands 608 b.

In some embodiments, a process for extending the interconnect structure604 comprises: 1) depositing a lower interconnect portion of the secondinterconnect dielectric layer 606 b; 2) forming the isolated metalislands 608 b and sub-vias 610 b underlying the isolated metal islands608 b by a dual damascene process insetting into the lower interconnectportion; 3) forming an upper interconnect portion of the secondinterconnect dielectric layer 606 b on the isolated metal islands 608 band the lower interconnect portion; and 4) forming a sub-vias 610 boverlying the isolated metal islands 608 b and inset into the upperinterconnect portion. Other processes for extending the interconnectstructure 604 are, however, amenable.

Still as illustrated by the cross-sectional view 1600 of FIG. 16, adata-storage element 106 is formed overlying the interconnect structure604, on one of the sub-vias 610 b. The data-storage element 106 may, forexample, be an MTJ, a MIM stack, or some other suitable structure fordata storage. In some embodiments in which the data-storage element 106is an MTJ comprising a reference ferromagnetic element 108, a freeferromagnetic element 110, and a barrier element 112. The barrierelement 112 is non-magnetic and is sandwiched between the referenceferromagnetic element 108 and free ferromagnetic element 110. Thereference ferromagnetic element 108 and free ferromagnetic element 110are ferromagnetic, and the free ferromagnetic element 110 overlies thereference ferromagnetic element 108 and the barrier element 112.Alternatively, locations of the reference ferromagnetic element 108 andfree ferromagnetic element 110 are switched.

In some embodiments, a process for forming the data-storage element 106comprises: 1) depositing a reference layer on the interconnect structure604; 2) depositing a barrier layer on the reference layer; 3) depositinga free layer on the barrier layer; and 4) patterning the reference,barrier, and free layers into the data-storage element 106. Otherprocesses are, however, amenable. For example, the free layer may bedeposited at 1) and the reference layer may be deposited at 3). Thedepositing may, for example, be performed by CVD, PVD, electrolessplating, electroplating, some other suitable deposition process(es), orany combination of the foregoing. The patterning may, for example, beperformed by a photolithography/etching process and/or some othersuitable patterning process(es).

As illustrated by the cross-sectional view 1700 of FIG. 17, theinterconnect structure 604 is completed around the data-storage element106. The completed interconnect structure 604 comprises a thirdinterconnect dielectric layer 606 c, a third wire 608 c defining asource line SL, and a third via 610 c. The third interconnect dielectriclayer 606 c accommodates the third wire 608 c and the third via 610 c.Further, the third interconnect dielectric layer 606 c may, for example,be as the first interconnect dielectric layer 606 a is described. Insome embodiments, a process for completing the interconnect structure604 comprises: 1) depositing the third interconnect dielectric layer 606c; and 2) simultaneously forming the third wire 608 c and the third via610 c inset into the third interconnect dielectric layer 606 c. Otherprocesses for extending the interconnect structure 604 are, however,amenable.

The method illustrated by FIGS. 14-17 may, for example, be employed toform the memory cell in any one of FIGS. 1-4, the integrated chip in anyone of FIG. 6A-6D, 12 or 13, or the memory array in any one of FIGS.7-11. Further, while the cross-sectional views 1400-1700 shown in FIGS.14-17 are described with reference to a method, it will be appreciatedthat the structures shown in FIGS. 14-17 are not limited to the methodand may stand alone without the method.

With reference to FIG. 18, a block diagram 1800 of some embodiments ofthe method of FIGS. 14-17 is provided.

At 1802, an interconnect structure is partially formed on a substrate,where the partially formed interconnect structure comprises a bit linewire and a via on the bit line wire. See, for example, FIG. 14.

At 1804, a unipolar selector is formed on the via, where an anode of thefirst unipolar selector faces the bit line wire. See, for example, FIG.15.

At 1806, the interconnect structure is extended around the unipolarselector. See, for example, FIG. 16.

At 1808, a data-storage element is formed and electrically coupled tothe unipolar selector. See, for example, FIG. 16.

At 1810, the interconnect structure is formed around the data-storageelement, where the completed interconnect structure comprises a sourceline wire overlying and electrically coupled to the data-storageelement. See, for example, FIG. 17.

With reference to FIG. 19, a block diagram 1900 of some embodiments of amethod of operating a memory device is provided.

At act 1902, A memory device including a plurality of memory cellsarranged in rows and columns is formed. The memory device can be formedby method described above associated with FIGS. 14-18 or by otherapplicable fabrication methods. The plurality of memory cellsrespectively comprises a unipolar selector and a data-storage elementelectrically coupled in series. The memory device may include memorycells shown by FIGS. 1-4, memory arrays shown by FIGS. 7-11, orintegrated chips shown by FIG. 6A-6D, 12 or 13.

At act 1904, in some embodiments, the plurality of memory cells ispre-set to a first data state (e.g. logic “0”). In some embodiments, thepre-set operation is performed after wafer fabrication but beforetesting and onetime programing (OTP). The pre-set operation may beperformed by applying a high external magnetic field (for example 0.5-5tesla) to set all the memory cells by aligning magnetic directions offerromagnetic elements. The pre-set operation can be performed off-boardor on-board by a magnetic field generator. The magnetic field generatoris configured to apply the high external magnetic field magnetic fieldthat couples to the data storage elements of the memory cells and setsthe data storage elements to the first data state.

At act 1906, a writing voltage is applied across a first selected memorycell at a first polarity to turn on the unipolar selector of the firstselected memory cell. The data-storage element of the first selectedmemory cell is written to a second data state (e.g. logic “1”). Thedata-storage element may be written by the current flowing through thedata-storage element or the voltage applied across the data-storageelement. FIG. 8A shows an example schematic diagram when performing awriting operation. By using the unipolar selector, remaining unselectedmemory cells can be biased at a second polarity opposite to the firstpolarity to keep the unselected memory cells off and thus minimizeleakage current. By reducing leakage current, writing disturbance can bereduced.

At act 1908, a reading voltage is applied across a second selectedmemory cell at the first polarity to turn on the unipolar selector ofthe second selected memory cell such that a data state of thedata-storage element of the second selected memory cell is read. FIG. 8Bshows an example schematic diagram when performing a reading operation.By using the unipolar selector, remaining unselected memory cells can bebiased at a second polarity opposite to the first polarity to keep theunselected memory cells off. Thus, leakage current and its resultingreading disturbance can be reduced.

At act 1910, in some embodiments, the plurality of memory cells is resetto the first data state (e.g. logic “0”) when needed. The resetoperation may be performed by an on-board magnetic field generator,which can be a current carrying wire for example. The magnetic fieldgenerator is configured to generate an external magnetic field thatcouples to the data storage elements of the memory cells and sets thedata storage elements to the first data state.

While the block diagram 1800 of FIG. 18 and the block diagram 1900 ofFIG. 19 are illustrated and described herein as a series of acts orevents, it will be appreciated that the illustrated orderings of suchacts or events are not to be interpreted in a limiting sense. Forexample, some acts may occur in different orders and/or concurrentlywith other acts or events apart from those illustrated and/or describedherein. Further, not all illustrated acts may be required to implementone or more aspects or embodiments of the description herein, and one ormore of the acts depicted herein may be carried out in one or moreseparate acts and/or phases.

In some embodiments, the present application provides a memory cell. Thememory cell comprises a data-storage element having a variableresistance and a unipolar selector electrically coupled in series withthe data-storage element. The memory cell is configured to be written bya writing voltage with a single polarity applying across thedata-storage element and the unipolar selector.

In some alternative embodiments, the present application provides anintegrated chip. The integrated chip comprises a first memory arraydisposed over a substrate and comprising a first plurality of memorycells arranged in rows and columns. The first plurality of memory cellsrespectively comprises a unipolar selector and a data-storage elementelectrically coupled in series. The integrated chip further comprises afirst plurality of bit lines extending along corresponding rows of thememory array and respectively connected with first terminals of thefirst plurality of memory cells in the corresponding rows. Theintegrated chip further comprises a first plurality of source linesextending along corresponding columns of the first memory array andrespectively connected with second terminals of the first plurality ofmemory cells in the corresponding columns.

In some alternative embodiments, the present application provides amethod of operating a memory device. A memory array is providedcomprising a plurality of memory cells arranged in rows and columns. Theplurality of memory cells respectively comprises a unipolar selector anda data-storage element electrically coupled in series. A writing voltageis applied across a first selected memory cell at a first polarity toturn on the unipolar selector of the first selected memory cell suchthat the data-storage element of the first selected memory cell iswritten to a first data state. A reading voltage is applied across asecond selected memory cell at the first polarity to turn on theunipolar selector of the second selected memory cell. A data state ofthe data-storage element of the second selected memory cell is readwithout being altered

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A memory cell, comprising: a data-storage elementhaving a variable resistance; and a unipolar selector electricallycoupled in series with the data-storage element; wherein the memory cellis configured to be written from a first data state to a second datastate by a single polarity writing voltage applied across thedata-storage element and the unipolar selector.
 2. The memory cellaccording to claim 1, further comprising a magnetic field generatorconfigured to generate a magnetic field coupled to the data-storageelement and reset the data-storage element from the second data state tothe first data state.
 3. The memory cell according to claim 1, whereinthe data-storage element is read only and is configured to be read byapplying a reading voltage across the data-storage element and theunipolar selector with the same polarity as the writing voltage.
 4. Thememory cell according to claim 1, wherein the data-storage elementcomprises a magnetic tunnel junction (MTJ), and wherein the MTJcomprises a reference ferromagnetic element and a free ferromagneticelement separated by a tunneling barrier layer.
 5. The memory cellaccording to claim 4, wherein a cathode of the unipolar selector isdirectly connected to the reference ferromagnetic element of the MTJ;wherein an anode of the unipolar selector is directly connected to asource line; and wherein the free ferromagnetic element of the MTJ isdirectly connected to a bit line.
 6. The memory cell according to claim1, wherein the unipolar selector is a PIN diode.
 7. An integrated chip,comprising: a first memory array disposed over a substrate andcomprising a first plurality of memory cells arranged in rows andcolumns, wherein the first plurality of memory cells respectivelycomprises a unipolar selector and a data-storage element electricallycoupled in series; a first plurality of bit lines extending alongcorresponding rows of first the memory array and respectively connectedto first terminals of the first plurality of memory cells in thecorresponding rows; and a first plurality of source lines extendingalong corresponding columns of the first memory array and respectivelyconnected to second terminals of the first plurality of memory cells inthe corresponding columns.
 8. The integrated chip according to claim 7,wherein the data-storage element is a magnetic tunnel junction (MTJ)comprising a reference ferromagnetic element and a free ferromagneticelement separated by a tunneling barrier layer; and wherein thedata-storage element is configured to be written from a first data stateto a second data state by applying a writing voltage with a singlepolarity across the data-storage element and the unipolar selector. 9.The integrated chip according to claim 8, wherein the first memory arrayis configured to be pre-set to the first data state by an externalmagnetic field.
 10. The integrated chip according to claim 8, furthercomprising: a current carrying wire that is magnetically coupled to thedata-storage elements of the first plurality of memory cells, whereinthe current carrying wire is configured to generate a magnetic fieldthat resets the first plurality of memory cells to the first data state.11. The integrated chip according to claim 7, further comprising: asecond memory array stacked over the first memory array and comprising asecond plurality of memory cells arranged in rows and columns, whereinthe second plurality of memory cells respectively comprises a unipolarselector and a data-storage element electrically coupled in series; asecond plurality of bit lines extending along corresponding rows of thesecond memory array and electrically coupled with first terminals of thesecond plurality of memory cells in the corresponding rows; and a secondplurality of source lines extending along corresponding columns of thesecond memory array and respectively connected with second terminals ofthe second plurality of memory cells in the corresponding columns. 12.The integrated chip according to claim 11, wherein the first memoryarray and the second memory array are embedded in a logic circuitdisposed on the substrate.
 13. The integrated chip according to claim 7,further comprising: a second memory array comprising a second pluralityof memory cells arranged in rows and columns, wherein the secondplurality of memory cells respectively comprises a unipolar selector anda data-storage element electrically coupled in series; and a secondplurality of bit lines extending along corresponding rows of the secondmemory array and electrically coupled with first terminals of the secondplurality of memory cells in the corresponding rows; and wherein thefirst plurality of source lines also extends along corresponding columnsof the second memory array and electrically coupled with secondterminals of the memory cells of the second memory array in thecorresponding columns.
 14. The integrated chip according to claim 13,wherein anodes of the unipolar selectors of the first memory array areconnected to the first plurality of bit lines, and wherein cathodes ofthe unipolar selectors of the first memory array are connected to firstterminals of the data-storage element of the first memory array; whereinanodes of the unipolar selectors of the second memory array areconnected to the second plurality of bit lines, and wherein cathodes ofthe unipolar selectors of the second memory array are connected to firstterminals of the data-storage elements of the second memory array; andwherein second terminals of the data-storage elements of the firstmemory array and the second memory array are respectively connected tothe first plurality of source lines.
 15. A method of operating a memorydevice, comprising: providing a memory array comprising a plurality ofmemory cells arranged in rows and columns, wherein the plurality ofmemory cells is pre-set to a first data status and is respectivelycomprises a unipolar selector and a data-storage element electricallycoupled in series; applying a writing voltage across a first selectedmemory cell at a first polarity to turn on the unipolar selector of thefirst selected memory cell such that the data-storage element of thefirst selected memory cell is written from the first data state to asecond data state; and applying a reading voltage across a secondselected memory cell at the first polarity to turn on the unipolarselector of the second selected memory cell, wherein a data state of thedata-storage element of the second selected memory cell is read.
 16. Themethod according to claim 15, wherein unselected memory cells are biasedat a second polarity opposite to the first polarity when applying thewriting voltage across the first selected memory cell.
 17. The methodaccording to claim 16, wherein the unselected memory cells are reverselybiased by an inhibiting voltage having an absolute value that is equalto that of the writing voltage.
 18. The method according to claim 15,wherein unselected memory cells are biased at a second polarity oppositeto the first polarity when applying the reading voltage across thesecond selected memory cell; and wherein the unselected memory cells arebiased by an inhibiting voltage having an absolute value that is equalto that of the reading voltage when applying the reading voltage to thesecond selected memory cell.
 19. The method according to claim 15,wherein pre-setting the plurality of memory cells to the first datastate is performed by applying an external magnetic field generated byan off-board magnetic generator.
 20. The method according to claim 15,further comprising resetting the plurality of memory cells to the firstdata state by applying an external magnetic field using a currentcarrying wire that is magnetically coupled to the data-storage elementsof the plurality of memory cells.